ISSUE 1 - MARCH 2000
ZXT14N20DX
SuperSOT4TM
20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=20V; R
SAT
= 13m ; I
C
= 7A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 15A
I
C
=7A Continuous Collector Current
MSOP8 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT14N20DXTA
7
12mm embossed
1000 units
ZXT14N20DXTC
13
12mm embossed
4000 units
DEVICE MARKING
T14N20DX
Top View
1
MSOP8
C
E
B
3
2
1
4
8
7
6
5
E
E
E
B
C
C
C
C
ISSUE 1 - MARCH 2000
ZXT14N20DX
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
70
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
7.5
V
Peak Pulse Current (c)
I
CM
30
A
Continuous Collector Current
I
C
7
A
Base Current
I
B
500
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
1.8
14.4
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ISSUE 1 - MARCH 2000
ZXT14N20DX
3
CHARACTERISTICS
ISSUE 1 - MARCH 2000
ZXT14N20DX
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
50
100
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
20
30
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
7.5
8.5
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=40V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=6V
Collector Emitter Cut-Off Current
I
CES
100
nA
V
CES
=40V
Collector-Emitter Saturation
Voltage
V
CE(sat)
4.5
30
75
115
90
6
45
95
140
115
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=4A, I
B
=40mA*
I
C
=7A, I
B
=70mA*
I
C
=7A, I
B
=350mA*
Base-Emitter Saturation Voltage
V
BE(sat)
0.9
V
I
C
=7A, I
B
=70mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.85
V
I
C
=7A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
250
300
250
125
400
500
400
250
900
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=7A, V
CE
=2V*
I
C
=15A, V
CE
=2V*
Transition Frequency
f
T
180
MHz
I
C
=300mA, V
CE
=10V
f=30MHz
Output Capacitance
C
obo
110
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
150
ns
V
CC
=10V, I
C
=7A
I
B1
=I
B2
=175mA
Turn-Off Time
t
(off)
345
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
4
ISSUE 1 - MARCH 2000
ZXT14N20DX
5
TYPICAL CHARACTERISTICS
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